All Transistors. UMD4N Datasheet

 

UMD4N Datasheet, Equivalent, Cross Reference Search

Type Designator: UMD4N

SMD Transistor Code: D4

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SOT-353

UMD4N Transistor Equivalent Substitute - Cross-Reference Search

 

UMD4N Datasheet (PDF)

1.1. umd4n.pdf Size:534K _upd

UMD4N
UMD4N

EMD4 / UMD4N Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline (6) EMT6 UMT6 Parameter Value (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) (2) IC(MAX.) 100mA (3) (3) R1 47kW EMD4 UMD4N (SC-107C) R2 SOT-353 (SC-88) 47kW Parameter Value VCC -50V IC(MAX.) -100mA R1 10kW

1.2. emd4 umd4n.pdf Size:75K _rohm

UMD4N
UMD4N

EMD4 / UMD4N Transistors General purpose (dual digital transistors) EMD4 / UMD4N Features External dimensions (Unit : mm) 1) Both the DTA114Y chip and DTC144E chip in EMD4 an EMT6 or UMT6 package. ( ) ( ) 4 3 2) Mounting possible with EMT3 or UMT3 automatic ( ) ( ) 5 2 6 1 mounting machines. ( ) ( ) 1.2 1.6 3) Transistor elements are independent, eliminating interfer

 

Datasheet: UMC3NT1G , UMC5NT1G , UMD12N , UMD12NFHA , UMD22N , UMD22NFHA , UMD2NFHA , UMD3NFHA , 2N2222A , UMD5N , UMD6NFHA , UMD9NFHA , UMH10NFHA , UMH11NFHA , UMH14N , UMH14NFHA , UMH1NFHA .

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