UMD4N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMD4N
SMD Transistor Code: D4
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SOT-353
UMD4N Transistor Equivalent Substitute - Cross-Reference Search
UMD4N Datasheet (PDF)
emd4 umd4n.pdf
EMD4 / UMD4N Transistors General purpose (dual digital transistors) EMD4 / UMD4N Features External dimensions (Unit : mm) 1) Both the DTA114Y chip and DTC144E chip in EMD4an EMT6 or UMT6 package. ( ) ( )4 32) Mounting possible with EMT3 or UMT3 automatic ( ) ( )5 26 1mounting machines. ( ) ( )1.21.63) Transistor elements are independent, eliminating inter
emd4 umd4n.pdf
EMD4 / UMD4NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline(6) EMT6 UMT6Parameter Value(6) (5) (5) (4) (4) VCC50V(1) (1) (2) (2) IC(MAX.)100mA (3) (3) R147kWEMD4 UMD4N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR110kW
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
