UMD4N Specs and Replacement
Type Designator: UMD4N
SMD Transistor Code: D4
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SOT-353
UMD4N Substitution
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UMD4N datasheet
EMD4 / UMD4N Transistors General purpose (dual digital transistors) EMD4 / UMD4N Features External dimensions (Unit mm) 1) Both the DTA114Y chip and DTC144E chip in EMD4 an EMT6 or UMT6 package. ( ) ( ) 4 3 2) Mounting possible with EMT3 or UMT3 automatic ( ) ( ) 5 2 6 1 mounting machines. ( ) ( ) 1.2 1.6 3) Transistor elements are independent, eliminating inter... See More ⇒
EMD4 / UMD4N Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline (6) EMT6 UMT6 Parameter Value (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) (2) IC(MAX.) 100mA (3) (3) R1 47kW EMD4 UMD4N (SC-107C) R2 SOT-353 (SC-88) 47kW Parameter Value VCC -50V IC(MAX.) -100mA R1 10kW... See More ⇒
Detailed specifications: UMC3NT1G, UMC5NT1G, UMD12N, UMD12NFHA, UMD22N, UMD22NFHA, UMD2NFHA, UMD3NFHA, 2SC5200, UMD5N, UMD6NFHA, UMD9NFHA, UMH10NFHA, UMH11NFHA, UMH14N, UMH14NFHA, UMH1NFHA
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