UMH14N Datasheet and Replacement
Type Designator: UMH14N
SMD Transistor Code: H14
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-353
UMH14N Datasheet (PDF)
umh14n.pdf

UMH14N / IMH14ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineUMT6 SMT6Parameter Tr1 and Tr2(4) (6) (5) (5) (6) (4) VCEO50V(3) (1) IC100mA (2) (2) (1) (3) R147kWUMH14N IMH14A SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInner circuitCollector 1) Built-In Biasing Resistors. Base Collector
umh14n umh14a.pdf

UMH14N / IMH14A Transistors General purpose (dual digital transistors) UMH14N / IMH14A External dimensions (Unit : mm) Features 1) Two DTC144T chips in a UMT or SMT package. UMH14N Equivalent circuit UMH14N IMH14A1.25(3) (2) (1) (4) (5) (6)2.1R1 R10.1Min.R1 R1(4) (5) (6) (3) (2) (1)ROHM : UMT6 Each lead has same dimensionsEIAJ : SC-88 Package, marking, an
umh14n.pdf

UMH14N dual digital transistors (NPN+ NPN)SOT-363 FEATURES Two DTC144T chips in a package. 1 Marking: H14 Equivalent circuit Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCBO Collector-base Voltage 50 V VCEO Collector-emitter Voltage 50 V VEBO Emitter-base Voltage 5 V IC Collector current 100 mA PD Power dissipation 150 mW TJ Junction temperatur
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: Q-05115C
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History: Q-05115C



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