UMH14N Specs and Replacement
Type Designator: UMH14N
SMD Transistor Code: H14
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-353
UMH14N Substitution
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UMH14N datasheet
UMH14N / IMH14A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline UMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) (6) (4) VCEO 50V (3) (1) IC 100mA (2) (2) (1) (3) R1 47kW UMH14N IMH14A SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInner circuit Collector 1) Built-In Biasing Resistors. Base Collector... See More ⇒
UMH14N / IMH14A Transistors General purpose (dual digital transistors) UMH14N / IMH14A External dimensions (Unit mm) Features 1) Two DTC144T chips in a UMT or SMT package. UMH14N Equivalent circuit UMH14N IMH14A 1.25 (3) (2) (1) (4) (5) (6) 2.1 R1 R1 0.1Min. R1 R1 (4) (5) (6) (3) (2) (1) ROHM UMT6 Each lead has same dimensions EIAJ SC-88 Package, marking, an... See More ⇒
UMH14N dual digital transistors (NPN+ NPN) SOT-363 FEATURES Two DTC144T chips in a package. 1 Marking H14 Equivalent circuit Absolute maximum ratings (Ta=25 ) Symbol Parameter Value Units VCBO Collector-base Voltage 50 V VCEO Collector-emitter Voltage 50 V VEBO Emitter-base Voltage 5 V IC Collector current 100 mA PD Power dissipation 150 mW TJ Junction temperatur... See More ⇒
Detailed specifications: UMD2NFHA, UMD3NFHA, UMD4N, UMD5N, UMD6NFHA, UMD9NFHA, UMH10NFHA, UMH11NFHA, C945, UMH14NFHA, UMH1NFHA, UMH2NFHA, UMH32N, UMH33N, UMH3NFHA, UMH4NFHA, UMH5NFHA
Keywords - UMH14N pdf specs
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