UMH32N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMH32N
SMD Transistor Code: H32
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: SOT-353
UMH32N Transistor Equivalent Substitute - Cross-Reference Search
UMH32N Datasheet (PDF)
..1. Size:298K rohm
umh32n.pdf
umh32n.pdf
UMH32NDatasheetNPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting.lOutline UMT6Parameter Tr1 and Tr2(6) (5) VCEO20V (4) (1) (2) VEBO40V (3) IC400mAUMH32N SOT-353 (SC-88) R14.7kWlFeatures1) Built-In Biasing Resistors2) Two DTC943TUB chips in one package.3) High Breakdown Voltage of Emitter to Base BVEBO is
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
