UMH32N PDF and Equivalents Search

 

UMH32N Specs and Replacement

Type Designator: UMH32N

SMD Transistor Code: H32

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 820

Noise Figure, dB: -

Package: SOT-353

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UMH32N datasheet

 ..1. Size:298K  rohm

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UMH32N

UMH32N Datasheet NPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting. lOutline UMT6 Parameter Tr1 and Tr2 (6) (5) VCEO 20V (4) (1) (2) VEBO 40V (3) IC 400mA UMH32N SOT-353 (SC-88) R1 4.7kW lFeatures 1) Built-In Biasing Resistors 2) Two DTC943TUB chips in one package. 3) High Breakdown Voltage of Emitter to Base BVEBO is... See More ⇒

Detailed specifications: UMD6NFHA , UMD9NFHA , UMH10NFHA , UMH11NFHA , UMH14N , UMH14NFHA , UMH1NFHA , UMH2NFHA , BC548 , UMH33N , UMH3NFHA , UMH4NFHA , UMH5NFHA , UMH6NFHA , UMH8NFHA , UMH9NFHA , US6H23 .

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