All Transistors. UMH32N Datasheet


UMH32N Datasheet, Equivalent, Cross Reference Search

Type Designator: UMH32N

SMD Transistor Code: H32

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 820

Noise Figure, dB: -

Package: SOT-353

UMH32N Transistor Equivalent Substitute - Cross-Reference Search


UMH32N Datasheet (PDF)

1.1. umh32n.pdf Size:298K _upd


UMH32N Datasheet NPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting. lOutline UMT6 Parameter Tr1 and Tr2 (6) (5) VCEO 20V (4) (1) (2) VEBO 40V (3) IC 400mA UMH32N SOT-353 (SC-88) R1 4.7kW lFeatures 1) Built-In Biasing Resistors 2) Two DTC943TUB chips in one package. 3) High Breakdown Voltage of Emitter to Base BVEBO is

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .


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