All Transistors. UMH32N Datasheet

 

UMH32N Datasheet and Replacement


   Type Designator: UMH32N
   SMD Transistor Code: H32
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 35 MHz
   Forward Current Transfer Ratio (hFE), MIN: 820
   Noise Figure, dB: -
   Package: SOT-353
 

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UMH32N Datasheet (PDF)

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UMH32N

UMH32NDatasheetNPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting.lOutline UMT6Parameter Tr1 and Tr2(6) (5) VCEO20V (4) (1) (2) VEBO40V (3) IC400mAUMH32N SOT-353 (SC-88) R14.7kWlFeatures1) Built-In Biasing Resistors2) Two DTC943TUB chips in one package.3) High Breakdown Voltage of Emitter to Base BVEBO is

Datasheet: UMD6NFHA , UMD9NFHA , UMH10NFHA , UMH11NFHA , UMH14N , UMH14NFHA , UMH1NFHA , UMH2NFHA , 2N3904 , UMH33N , UMH3NFHA , UMH4NFHA , UMH5NFHA , UMH6NFHA , UMH8NFHA , UMH9NFHA , US6H23 .

History: KRA225 | 3CA1012 | HJ3669 | 2SC4523 | MMBR5031 | BU931ZP | BUH515

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