All Transistors. UMH33N Datasheet

 

UMH33N Datasheet, Equivalent, Cross Reference Search

Type Designator: UMH33N

SMD Transistor Code: H33

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 820

Noise Figure, dB: -

Package: SOT-353

UMH33N Transistor Equivalent Substitute - Cross-Reference Search

 

UMH33N Datasheet (PDF)

1.1. umh33n.pdf Size:298K _upd

UMH33N
UMH33N

UMH33N Datasheet NPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting. lOutline UMT6 Parameter Tr1 and Tr2 (6) (5) VCEO 20V (4) (1) (2) VEBO 40V (3) IC 400mA UMH33N SOT-353 (SC-88) R1 2.2kW lFeatures 1) Built-In Biasing Resistors 2) Two DTC923TUB chips in one package. 3) High Breakdown Voltage of Emitter to Base BVEBO is

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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