All Transistors. UMH33N Datasheet

 

UMH33N Datasheet and Replacement


   Type Designator: UMH33N
   SMD Transistor Code: H33
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 35 MHz
   Forward Current Transfer Ratio (hFE), MIN: 820
   Noise Figure, dB: -
   Package: SOT-353
 

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UMH33N Datasheet (PDF)

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UMH33N

UMH33NDatasheetNPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting.lOutline UMT6Parameter Tr1 and Tr2(6) (5) VCEO20V (4) (1) (2) VEBO40V (3) IC400mAUMH33N SOT-353 (SC-88) R12.2kWlFeatures1) Built-In Biasing Resistors2) Two DTC923TUB chips in one package.3) High Breakdown Voltage of Emitter to Base BVEBO is

Datasheet: UMD9NFHA , UMH10NFHA , UMH11NFHA , UMH14N , UMH14NFHA , UMH1NFHA , UMH2NFHA , UMH32N , A1015 , UMH3NFHA , UMH4NFHA , UMH5NFHA , UMH6NFHA , UMH8NFHA , UMH9NFHA , US6H23 , 2SC9014 .

History: 2SC831 | 2SA496 | 2N1532A | BF194 | BD543A | RT2N15M | 2SD962

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