US6H23 Datasheet, Equivalent, Cross Reference Search
Type Designator: US6H23
SMD Transistor Code: H23
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: TUMT6
US6H23 Transistor Equivalent Substitute - Cross-Reference Search
US6H23 Datasheet (PDF)
1.1. us6h23.pdf 
Size:399K _upd
US6H23 / IMH23 Datasheet NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. lOutline TUMT6 SMT6 Parameter Tr1 and Tr2 (4) (4) (5) (5) VCEO (6) 20V (6) (3) (3) VEBO 12V (2) (2) (1) (1) IC 600mA IMH23 US6H23 R1 4.7kW SOT-457 (SC-74) lFeatures 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low
1.2. us6h23.pdf Size:98K _rohm
US6H23 Transistors Dual digital transistors US6H23 Dimensions (Unit : mm) Features In addition to the features of regular digital transistors. TUMT6 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. Structure NPN silicon epi
Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .
