US6H23 Datasheet and Replacement
Type Designator: US6H23
SMD Transistor Code: H23
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: TUMT6
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US6H23 Datasheet (PDF)
us6h23.pdf

US6H23 / IMH23DatasheetNPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting.lOutlineTUMT6 SMT6Parameter Tr1 and Tr2(4) (4) (5) (5) VCEO (6) 20V (6) (3) (3) VEBO12V (2) (2) (1) (1) IC600mAIMH23 US6H23 R14.7kW SOT-457 (SC-74) lFeatures1) Built-In Biasing Resistors2) Two DTC643T chips in one package.3) Low
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