STC8050N Datasheet. Specs and Replacement

Type Designator: STC8050N  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 19 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO-92N

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STC8050N datasheet

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STC8050N

STC8050N Semiconductor Semiconductor NPN Silicon Transistor Descriptions High current application Radio in class B push-pull operation Feature Complementary pair with STA8550N Ordering Information Type NO. Marking Package Code STC8050N STC8050 TO-92N Outline Dimensions unit mm 4.20 4.40 2.25 Max. 0.52 Max. 0.90 Max. 1.27 Typ. 0.40 Max. 1 2 3 3.55... See More ⇒

Detailed specifications: SMUN5335DW, KRC663E, KRC664E, 2SA1897, 2SC5966, 2SC6092LS, 3DD4204D, CHT847BWPT, S9014, XP6111, 3DD209L, 3DD313, 3DD2102, 3DD2901, 3DD5027, AV8050S, BFR360F

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