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STC8050N Specs and Replacement


   Type Designator: STC8050N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 19 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO-92N
 

 STC8050N Substitution

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STC8050N detailed specifications

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STC8050N

STC8050N Semiconductor Semiconductor NPN Silicon Transistor Descriptions High current application Radio in class B push-pull operation Feature Complementary pair with STA8550N Ordering Information Type NO. Marking Package Code STC8050N STC8050 TO-92N Outline Dimensions unit mm 4.20 4.40 2.25 Max. 0.52 Max. 0.90 Max. 1.27 Typ. 0.40 Max. 1 2 3 3.55... See More ⇒

Detailed specifications: SMUN5335DW , KRC663E , KRC664E , 2SA1897 , 2SC5966 , 2SC6092LS , 3DD4204D , CHT847BWPT , S9014 , XP6111 , 3DD209L , 3DD313 , 3DD2102 , 3DD2901 , 3DD5027 , AV8050S , BFR360F .

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