3DD2102 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD2102
SMD Transistor Code: D2102
Material of Transistor: Si
Polarity: NPN
Built in Bias Resistor R2 = 0.05 kOhm
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO3P
3DD2102 Transistor Equivalent Substitute - Cross-Reference Search
3DD2102 Datasheet (PDF)
1.1. 3dd2102.pdf 
Size:146K _update_bjt
低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY R 3DD2102 封装 Package 主要参数 MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 6 A I C 5 V(max) V CE(sat) t 1 μs(max) f 用途 APPLICATIONS 彩色电视机行输出电路 Horizontal deflection output for color TV. 1 2 3 FEATURES 产品
5.1. 3dd21.pdf Size:151K _china
3DD21 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 10 W ICM 0.6 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 10 ℃/W IC=0.2A V(BR)CBO ICB=1mA ≥150 ≥250 ≥400 ≥500 ≥600 ≥700 V V(BR)CEO ICE=1mA ≥100 ≥200 ≥300 ≥400 ≥500 ≥600 V V(BR)EBO IEB=0.5mA ≥5.0 V ICBO VCB=50V ≤0.2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
