MRF660 Datasheet. Specs and Replacement

Type Designator: MRF660  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 17 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220AB

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MRF660 datasheet

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MRF660

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Detailed specifications: 3DD313, 3DD2102, 3DD2901, 3DD5027, AV8050S, BFR360F, HLD133D, MP1620, BC546, HSC2682, MJ13001A, 2T665A9, 2T665B9, FW26025A1, 2SB817C, 2SD1047C, 2SC4714

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