MRF660 Datasheet, Equivalent, Cross Reference Search

Type Designator: MRF660

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 17 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220AB

MRF660 Datasheet (PDF)

1.1. mrf660.pdf Size:104K _update_bjt