HSC2682 Datasheet. Specs and Replacement

Type Designator: HSC2682  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 180 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126ML

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HSC2682 datasheet

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HSC2682

Spec. No. HE6626-B HI-SINCERITY Issued Date 1994.12.07 Revised Date 2000.10.01 MICROELECTRONICS CORP. Page No. 1/3 HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Description Audio frequency power amplifier, high frequency power amplifier. Absolute Maximum Ratings (Ta=25 C) Maximum Temperatures Storage Temperature ................................................................... See More ⇒

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HSC2682

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Detailed specifications: 3DD2102, 3DD2901, 3DD5027, AV8050S, BFR360F, HLD133D, MP1620, MRF660, A940, MJ13001A, 2T665A9, 2T665B9, FW26025A1, 2SB817C, 2SD1047C, 2SC4714, 2SC6089

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