HSC2682 Specs and Replacement
Type Designator: HSC2682
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO126ML
HSC2682 Substitution
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HSC2682 datasheet
Spec. No. HE6626-B HI-SINCERITY Issued Date 1994.12.07 Revised Date 2000.10.01 MICROELECTRONICS CORP. Page No. 1/3 HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Description Audio frequency power amplifier, high frequency power amplifier. Absolute Maximum Ratings (Ta=25 C) Maximum Temperatures Storage Temperature ................................................................... See More ⇒
Detailed specifications: 3DD2102 , 3DD2901 , 3DD5027 , AV8050S , BFR360F , HLD133D , MP1620 , MRF660 , TIP35C , MJ13001A , 2T665A9 , 2T665B9 , FW26025A1 , 2SB817C , 2SD1047C , 2SC4714 , 2SC6089 .
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