2T665B9 Datasheet. Specs and Replacement

Type Designator: 2T665B9  📄📄 

SMD Transistor Code: 2B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: NA

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Detailed specifications: AV8050S, BFR360F, HLD133D, MP1620, MRF660, HSC2682, MJ13001A, 2T665A9, 2SD669A, FW26025A1, 2SB817C, 2SD1047C, 2SC4714, 2SC6089, CE1A3Q, CHDTC114EKPT, 3DD5039

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