All Transistors. 2SC6089 Datasheet


2SC6089 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC6089

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3PMLH

2SC6089 Transistor Equivalent Substitute - Cross-Reference Search


2SC6089 Datasheet (PDF)

1.1. 2sc6089.pdf Size:51K _update_bjt


Ordering number : ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol C

4.1. 2sc6087.pdf Size:209K _update


2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle

4.2. 2sc6082.pdf Size:52K _sanyo


Ordering number : ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S

Datasheet: 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 , 2SC631 , BF494 , 2SC631AS , 2SC632 , 2SC632A , 2SC633 , 2SC633A , 2SC634 , 2SC634A , 2SC635 .


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