2SC6089 Datasheet. Specs and Replacement

Type Designator: 2SC6089  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3PMLH

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2SC6089 datasheet

 ..1. Size:51K  sanyo

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2SC6089

Ordering number ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C... See More ⇒

 8.1. Size:209K  toshiba

 2sc6087.pdf pdf_icon

2SC6089

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle... See More ⇒

 8.2. Size:52K  sanyo

 2sc6082.pdf pdf_icon

2SC6089

Ordering number ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed ... See More ⇒

 8.3. Size:236K  onsemi

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2SC6089

Ordering number ENA0279B 2SC6082 Bipolar Transistor http //onsemi.com ( ) 50V, 15A, Low VCE sat NPN TO-220F-3SG Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratin... See More ⇒

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Detailed specifications: HSC2682, MJ13001A, 2T665A9, 2T665B9, FW26025A1, 2SB817C, 2SD1047C, 2SC4714, 2SC2625, CE1A3Q, CHDTC114EKPT, 3DD5039, 3DD5040, ASY34, ASY35, ASY36, MT6L61AE

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