2SC6089 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6089
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO3PMLH
2SC6089 Transistor Equivalent Substitute - Cross-Reference Search
2SC6089 Datasheet (PDF)
1.1. 2sc6089.pdf 
Size:51K _update_bjt
Ordering number : ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol C
1.2. 2sc6089.pdf Size:51K _sanyo
Ordering number : ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol C
4.1. 2sc6087.pdf Size:209K _update
2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle
4.2. 2sc6082.pdf Size:52K _sanyo
Ordering number : ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications • High-speed switching applications (switching regulator, driver circuit). Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed
4.3. 2sc6082.pdf Size:179K _inchange_semiconductor
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6082 DESCRIPTION ·Large current capacitance ·High speed switching ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collec
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
