All Transistors. 2SC6089 Datasheet

 

2SC6089 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC6089

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3PMLH

2SC6089 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC6089 Datasheet (PDF)

1.1. 2sc6089.pdf Size:51K _update_bjt

2SC6089
2SC6089

Ordering number : ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol C

1.2. 2sc6089.pdf Size:51K _sanyo

2SC6089
2SC6089

Ordering number : ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol C

 4.1. 2sc6087.pdf Size:209K _update

2SC6089
2SC6089

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle

4.2. 2sc6082.pdf Size:52K _sanyo

2SC6089
2SC6089

Ordering number : ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications • High-speed switching applications (switching regulator, driver circuit). Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed

 4.3. 2sc6082.pdf Size:179K _inchange_semiconductor

2SC6089
2SC6089

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6082 DESCRIPTION ·Large current capacitance ·High speed switching ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collec

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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