2SC6089 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6089
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO3PMLH
2SC6089 Transistor Equivalent Substitute - Cross-Reference Search
2SC6089 Datasheet (PDF)
1.1. 2sc6089.pdf 
Size:51K _update_bjt
Ordering number : ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • Adoption of high reliability HVP process. • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol C
4.1. 2sc6087.pdf Size:209K _update
2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle
4.2. 2sc6082.pdf Size:52K _sanyo
Ordering number : ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S
Datasheet: 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 , 2SC631 , BF494 , 2SC631AS , 2SC632 , 2SC632A , 2SC633 , 2SC633A , 2SC634 , 2SC634A , 2SC635 .
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