2SC6089 Todos los transistores

 

2SC6089 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC6089
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3PMLH

 Búsqueda de reemplazo de transistor bipolar 2SC6089

 

2SC6089 Datasheet (PDF)

 ..1. Size:51K  sanyo
2sc6089.pdf pdf_icon

2SC6089

Ordering number ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C

 8.1. Size:209K  toshiba
2sc6087.pdf pdf_icon

2SC6089

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle

 8.2. Size:52K  sanyo
2sc6082.pdf pdf_icon

2SC6089

Ordering number ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

 8.3. Size:236K  onsemi
2sc6082.pdf pdf_icon

2SC6089

Ordering number ENA0279B 2SC6082 Bipolar Transistor http //onsemi.com ( ) 50V, 15A, Low VCE sat NPN TO-220F-3SG Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratin

Otros transistores... HSC2682 , MJ13001A , 2T665A9 , 2T665B9 , FW26025A1 , 2SB817C , 2SD1047C , 2SC4714 , 2SC2625 , CE1A3Q , CHDTC114EKPT , 3DD5039 , 3DD5040 , ASY34 , ASY35 , ASY36 , MT6L61AE .

History: NB122EI

 

 
Back to Top

 


 
.