2SC6089 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC6089  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO3PMLH

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SC6089

- Selecciónⓘ de transistores por parámetros

 

2SC6089 datasheet

 ..1. Size:51K  sanyo
 2sc6089.pdf pdf_icon

2SC6089

Ordering number ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C

 8.1. Size:209K  toshiba
 2sc6087.pdf pdf_icon

2SC6089

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle

 8.2. Size:52K  sanyo
 2sc6082.pdf pdf_icon

2SC6089

Ordering number ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

 8.3. Size:236K  onsemi
 2sc6082.pdf pdf_icon

2SC6089

Ordering number ENA0279B 2SC6082 Bipolar Transistor http //onsemi.com ( ) 50V, 15A, Low VCE sat NPN TO-220F-3SG Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratin

MOSTRAR MÁS

Otros transistores... HSC2682, MJ13001A, 2T665A9, 2T665B9, FW26025A1, 2SB817C, 2SD1047C, 2SC4714, 2SC2655, CE1A3Q, CHDTC114EKPT, 3DD5039, 3DD5040, ASY34, ASY35, ASY36, MT6L61AE