All Transistors. CE1A3Q Datasheet

 

CE1A3Q Datasheet and Replacement


   Type Designator: CE1A3Q
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO220AB
 

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CE1A3Q Datasheet (PDF)

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CE1A3Q

DATA SHEETCOMPOUND TRANSISTORCE1A3Qon-chip resistor NPN silicon epitaxial transistorFor mid-speed switchingThe CE1A3Q is a transistor of on-chip high hFE resistorincorporating dumper diode in collector to emitter and zener diode PACKAGE DRAWING (UNIT: mm)in collector to base as protect elements. This transistor is ideal foractuator drives of OA equipments and electric equipments

Datasheet: MJ13001A , 2T665A9 , 2T665B9 , FW26025A1 , 2SB817C , 2SD1047C , 2SC4714 , 2SC6089 , A1013 , CHDTC114EKPT , 3DD5039 , 3DD5040 , ASY34 , ASY35 , ASY36 , MT6L61AE , MT6L61AS .

History: KRA736E | SN274 | 2SC3601F | SPS3015 | ST13007DFP | DDA143TK | KRA738E

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