All Transistors. CE1A3Q Datasheet

 

CE1A3Q Datasheet and Replacement


   Type Designator: CE1A3Q
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO220AB
      - BJT Cross-Reference Search

   

CE1A3Q Datasheet (PDF)

 ..1. Size:121K  nec
 ce1a3q.pdf pdf_icon

CE1A3Q

DATA SHEETCOMPOUND TRANSISTORCE1A3Qon-chip resistor NPN silicon epitaxial transistorFor mid-speed switchingThe CE1A3Q is a transistor of on-chip high hFE resistorincorporating dumper diode in collector to emitter and zener diode PACKAGE DRAWING (UNIT: mm)in collector to base as protect elements. This transistor is ideal foractuator drives of OA equipments and electric equipments

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCY98 | SFT243 | BC548B | HA7598 | D4515 | GES6004 | BC727-16

Keywords - CE1A3Q transistor datasheet

 CE1A3Q cross reference
 CE1A3Q equivalent finder
 CE1A3Q lookup
 CE1A3Q substitution
 CE1A3Q replacement

 

 
Back to Top

 


 
.