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CE1A3Q Specs and Replacement


   Type Designator: CE1A3Q
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO220AB

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CE1A3Q detailed specifications

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CE1A3Q

DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode PACKAGE DRAWING (UNIT mm) in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments... See More ⇒

Detailed specifications: MJ13001A , 2T665A9 , 2T665B9 , FW26025A1 , 2SB817C , 2SD1047C , 2SC4714 , 2SC6089 , SS8050 , CHDTC114EKPT , 3DD5039 , 3DD5040 , ASY34 , ASY35 , ASY36 , MT6L61AE , MT6L61AS .

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