CE1A3Q Datasheet, Equivalent, Cross Reference Search
Type Designator: CE1A3Q
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 15
V
Maximum Collector Current |Ic max|: 2
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO220AB
CE1A3Q Transistor Equivalent Substitute - Cross-Reference Search
CE1A3Q Datasheet (PDF)
ce1a3q.pdf
DATA SHEETCOMPOUND TRANSISTORCE1A3Qon-chip resistor NPN silicon epitaxial transistorFor mid-speed switchingThe CE1A3Q is a transistor of on-chip high hFE resistorincorporating dumper diode in collector to emitter and zener diode PACKAGE DRAWING (UNIT: mm)in collector to base as protect elements. This transistor is ideal foractuator drives of OA equipments and electric equipments
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
