CE1A3Q Specs and Replacement
Type Designator: CE1A3Q
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO220AB
CE1A3Q Substitution
CE1A3Q datasheet
ce1a3q.pdf
DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode PACKAGE DRAWING (UNIT mm) in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments... See More ⇒
Detailed specifications: MJ13001A , 2T665A9 , 2T665B9 , FW26025A1 , 2SB817C , 2SD1047C , 2SC4714 , 2SC6089 , SS8050 , CHDTC114EKPT , 3DD5039 , 3DD5040 , ASY34 , ASY35 , ASY36 , MT6L61AE , MT6L61AS .
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