PTE20124 Specs and Replacement
Type Designator: PTE20124
Material of Transistor: SiNi
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 7.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1600 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: 20209
PTE20124 Substitution
- BJT ⓘ Cross-Reference Search
PTE20124 datasheet
e PTE 20124* 40 Watts, 1.465 1.513 GHz Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended 40 Watts, 1.465 1.513 GHz for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 Class AB Characteristics watts minimum output power, it is specifically intended for cellular Gold Metallization and DAB power app... See More ⇒
Detailed specifications: STC9014A, STC9014B, STC9014C, STC9014D, ST1802HI, ST1802FH, ST1803DHI, ST1803DFH, BC639, KSB798O, KSB798Y, KSB798G, 183T2C, 2SA2122G, 2SC5487, 2SC5996A, 2SC5996B
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