All Transistors. PTE20124 Datasheet

 

PTE20124 Datasheet and Replacement


   Type Designator: PTE20124
   Material of Transistor: SiNi
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 7.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1600 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: 20209
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PTE20124 Datasheet (PDF)

 ..1. Size:252K  ericsson
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PTE20124

ePTE 20124*40 Watts, 1.4651.513 GHzCellular Radio RF Power TransistorDescriptionThe 20124 is an NPN common emitter RF power transistor intended 40 Watts, 1.4651.513 GHzfor 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 Class AB Characteristicswatts minimum output power, it is specifically intended for cellular Gold Metallizationand DAB power app

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2134 | 2S93 | DZT5551Q | NSS1C301E | KT8212B | GSDS50018 | CMLT5078E

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