183T2C Datasheet, Equivalent, Cross Reference Search
Type Designator: 183T2C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 87.5 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO-3
183T2C Transistor Equivalent Substitute - Cross-Reference Search
183T2C Datasheet (PDF)
183t2c.pdf
Technical DataTRANSISTORmaximum ratingsVoltage, Collector to Base (VCBO) 300.0 V NO. 183T2CVoltage, Collector to Emitter (VCE) 180.0 V TYPE NPNVoltage, Emitter to Base (VEBO) 10.0 V empty emptyCollector Current (IC) 6.0 A empty emptyBase Current (IB) 3.0 A CASE TO-3Max. Power Dissipation (PT) at TC = 25 C 87.5 W empty emptyMax. Thermal Resistance (Rth J-C) 2.0 C/W empty em
bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf
COMSETSEMICONDUCTORSBDY26, 183 T2BDY27, 184 T2BDY28, 185 T2NPN SILICON TRANSISTORS, DIFFUSEDMESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY26, 183T2 180VCEO Collector-Emitter Voltage BDY27, 184T2 200 VBDY28, 185T2 250BDY26, 183T2 300VCBO Collector-Base Voltage BDY27, 184T2 400 VBDY28, 185T2 50
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 100T2
