183T2C Specs and Replacement
Type Designator: 183T2C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 87.5 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO-3
183T2C Substitution
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183T2C datasheet
Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) 300.0 V NO. 183T2C Voltage, Collector to Emitter (VCE) 180.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 10.0 V empty empty Collector Current (IC) 6.0 A empty empty Base Current (IB) 3.0 A CASE TO-3 Max. Power Dissipation (PT) at TC = 25 C 87.5 W empty empty Max. Thermal Resistance (Rth J-C) 2.0 C/W empty em... See More ⇒
bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf ![]()
COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY26, 183T2 180 VCEO Collector-Emitter Voltage BDY27, 184T2 200 V BDY28, 185T2 250 BDY26, 183T2 300 VCBO Collector-Base Voltage BDY27, 184T2 400 V BDY28, 185T2 50... See More ⇒
Detailed specifications: ST1802HI, ST1802FH, ST1803DHI, ST1803DFH, PTE20124, KSB798O, KSB798Y, KSB798G, TIP142, 2SA2122G, 2SC5487, 2SC5996A, 2SC5996B, 30C02S, CH848BPTP, CH848BPTQ, CH848BPTY
Keywords - 183T2C pdf specs
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