FA1L3Z-L38 Datasheet. Specs and Replacement
Type Designator: FA1L3Z-L38 📄📄
SMD Transistor Code: L38
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 300
Package: MINI-MOLD
📄📄 Copy
FA1L3Z-L38 Substitution
- BJT ⓘ Cross-Reference Search
FA1L3Z-L38 datasheet
Detailed specifications: CHTA27XPT, DC8550B, DC8550C, DC8550D, DC8550E, EB102, FA1L3Z-L36, FA1L3Z-L37, C5198, KSC5802D, KTC601UY, NP061A3, 2SD1710C, 3DD2553, 3DA4544R, 3DA4544O, 3DA4544Y
Keywords - FA1L3Z-L38 pdf specs
FA1L3Z-L38 cross reference
FA1L3Z-L38 equivalent finder
FA1L3Z-L38 pdf lookup
FA1L3Z-L38 substitution
FA1L3Z-L38 replacement



