UNR921KJ Datasheet. Specs and Replacement
Type Designator: UNR921KJ 📄📄
SMD Transistor Code: 8P
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SC89
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UNR921KJ datasheet
Transistors with built-in Resistor UNR92XXJ Series (UN92XXJ Series) Silicon NPN epitaxial planer type Unit mm 1.60+0.05 0.03 For digital circuit 0.12+0.03 0.01 1.00 0.05 3 Features Costs can be reduced through downsizing of the equipment and 1 2 reduction of the number of parts. 0.27 0.02 SS-mini type package, allowing automatic insertion through tape (0.50)(0... See More ⇒
Detailed specifications: UNR921BJ, UNR921CJ, UNR921DJ, UN921DJ, UNR921EJ, UN921EJ, UNR921FJ, UN921FJ, 2SB817, UN921KJ, UNR921LJ, UN921LJ, UNR921MJ, UNR921NJ, UNR921TJ, UN921TJ, UNR921VJ
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