UNR921VJ Datasheet and Replacement
Type Designator: UNR921VJ
SMD Transistor Code: FD
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: SC89
UNR921VJ Substitution
UNR921VJ Datasheet (PDF)
unr921xj un921xj series.pdf

Transistors with built-in ResistorUNR92XXJ Series (UN92XXJ Series)Silicon NPN epitaxial planer typeUnit: mm1.60+0.050.03For digital circuit0.12+0.030.011.000.053 Features Costs can be reduced through downsizing of the equipment and1 2reduction of the number of parts.0.270.02 SS-mini type package, allowing automatic insertion through tape(0.50)(0
Datasheet: UNR921KJ , UN921KJ , UNR921LJ , UN921LJ , UNR921MJ , UNR921NJ , UNR921TJ , UN921TJ , 2SC2383Y , UNR5210 , UNR5211 , UNR5212 , UNR5213 , UNR5214 , UNR5215 , UNR5216 , UNR5217 .
Keywords - UNR921VJ transistor datasheet
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History: KRA307V | DTC014YEB



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