UNR5211 Datasheet. Specs and Replacement
Type Designator: UNR5211 📄📄
SMD Transistor Code: 8A
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: SC70
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UNR5211 datasheet
Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape packing and magazine packing (... See More ⇒
Detailed specifications: UNR921LJ, UN921LJ, UNR921MJ, UNR921NJ, UNR921TJ, UN921TJ, UNR921VJ, UNR5210, D965, UNR5212, UNR5213, UNR5214, UNR5215, UNR5216, UNR5217, UNR5218, UNR5219
Keywords - UNR5211 pdf specs
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BJT Parameters and How They Relate
History: UN9110S | FH306 | 2SB927R | UN521T | 2SB772SQ-R | 2SC1393K
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