UNR5212 Datasheet and Replacement
Type Designator: UNR5212
SMD Transistor Code: 8B
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SC70
UNR5212 Substitution
UNR5212 Datasheet (PDF)
unr521x un521x series.pdf

Transistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tapepacking and magazine packing(
Datasheet: UN921LJ , UNR921MJ , UNR921NJ , UNR921TJ , UN921TJ , UNR921VJ , UNR5210 , UNR5211 , TIP2955 , UNR5213 , UNR5214 , UNR5215 , UNR5216 , UNR5217 , UNR5218 , UNR5219 , UNR521D .
History: FJY3001R
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History: FJY3001R



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