UNR221V Datasheet and Replacement
Type Designator: UNR221V
SMD Transistor Code: FD
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: SC59
UNR221V Substitution
UNR221V Datasheet (PDF)
unr221x un221x series.pdf

Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing
Datasheet: UNR221D , UNR221E , UNR221F , UNR221K , UNR221L , UNR221M , UNR221N , UNR221T , TIP41 , UNR221Z , UNR5110 , UNR5111 , UNR5112 , UNR5113 , UNR5114 , UNR5115 , UNR5116 .
History: 2SB520 | BFS16 | LBC847CLT3G | MPS6570A | BCX78X | MT6L62AE | NSBA113EDXV6T1
Keywords - UNR221V transistor datasheet
UNR221V cross reference
UNR221V equivalent finder
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History: 2SB520 | BFS16 | LBC847CLT3G | MPS6570A | BCX78X | MT6L62AE | NSBA113EDXV6T1



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