All Transistors. UNR221V Datasheet

 

UNR221V Datasheet and Replacement


   Type Designator: UNR221V
   SMD Transistor Code: FD
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: SC59
 

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UNR221V Datasheet (PDF)

 8.1. Size:427K  panasonic
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UNR221V

Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing

Datasheet: UNR221D , UNR221E , UNR221F , UNR221K , UNR221L , UNR221M , UNR221N , UNR221T , TIP41 , UNR221Z , UNR5110 , UNR5111 , UNR5112 , UNR5113 , UNR5114 , UNR5115 , UNR5116 .

History: 2SB520 | BFS16 | LBC847CLT3G | MPS6570A | BCX78X | MT6L62AE | NSBA113EDXV6T1

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