All Transistors. UNR5110 Datasheet

 

UNR5110 Datasheet and Replacement


   Type Designator: UNR5110
   SMD Transistor Code: 6L
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SC70
 

 UNR5110 Substitution

   - BJT ⓘ Cross-Reference Search

   

UNR5110 Datasheet (PDF)

 8.1. Size:431K  panasonic
 unr511x un511x series.pdf pdf_icon

UNR5110

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)

Datasheet: UNR221F , UNR221K , UNR221L , UNR221M , UNR221N , UNR221T , UNR221V , UNR221Z , 2N3904 , UNR5111 , UNR5112 , UNR5113 , UNR5114 , UNR5115 , UNR5116 , UNR5117 , UNR5118 .

History: 2SC280H | DDTC143ZE | 2SC870 | BD249F | SRA2204M | KT645B | 2SC2315

Keywords - UNR5110 transistor datasheet

 UNR5110 cross reference
 UNR5110 equivalent finder
 UNR5110 lookup
 UNR5110 substitution
 UNR5110 replacement

 

 
Back to Top

 


 
.