UNR511E Datasheet. Specs and Replacement

Type Designator: UNR511E  📄📄 

SMD Transistor Code: 6N

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SC70

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UNR511E datasheet

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UNR511E

Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape/ magazine packing (0.65) (0.65)... See More ⇒

Detailed specifications: UNR5113, UNR5114, UNR5115, UNR5116, UNR5117, UNR5118, UNR5119, UNR511D, D882, UNR511F, UNR511H, UNR511L, UNR511M, UNR511N, UNR511T, UNR511V, UNR511Z

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