All Transistors. UNR511E Datasheet

 

UNR511E Datasheet and Replacement


   Type Designator: UNR511E
   SMD Transistor Code: 6N
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SC70
 

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UNR511E Datasheet (PDF)

 8.1. Size:431K  panasonic
 unr511x un511x series.pdf pdf_icon

UNR511E

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)

Datasheet: UNR5113 , UNR5114 , UNR5115 , UNR5116 , UNR5117 , UNR5118 , UNR5119 , UNR511D , A1941 , UNR511F , UNR511H , UNR511L , UNR511M , UNR511N , UNR511T , UNR511V , UNR511Z .

History: 2SB649AM | 2SD1047C | DDTC144GKA | DTA143ZSA | 2SC1650 | KN4A3Q | 2SA234

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