All Transistors. UNR511M Datasheet

 

UNR511M Datasheet and Replacement


   Type Designator: UNR511M
   SMD Transistor Code: EI
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC70
 

 UNR511M Substitution

   - BJT ⓘ Cross-Reference Search

   

UNR511M Datasheet (PDF)

 8.1. Size:431K  panasonic
 unr511x un511x series.pdf pdf_icon

UNR511M

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)

Datasheet: UNR5117 , UNR5118 , UNR5119 , UNR511D , UNR511E , UNR511F , UNR511H , UNR511L , 13003 , UNR511N , UNR511T , UNR511V , UNR511Z , UN5110 , UN5111 , UN5112 , UN5113 .

History: MPS6714 | 2SC253 | BSV86 | MJ4211 | 2SC3422Y | BSV65 | 2SC2531

Keywords - UNR511M transistor datasheet

 UNR511M cross reference
 UNR511M equivalent finder
 UNR511M lookup
 UNR511M substitution
 UNR511M replacement

 

 
Back to Top

 


 
.