All Transistors. 2NC5566 Datasheet

 

2NC5566 Datasheet and Replacement


   Type Designator: 2NC5566
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 230 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 750 pF
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO-3PL
 

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2NC5566 Datasheet (PDF)

 ..1. Size:200K  inchange semiconductor
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2NC5566

isc Silicon NPN Power Transistor 2NC5566DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicatio

Datasheet: UN511Z , FJP5027R , FJP5027O , ZDT690 , ZDT705 , ZDT758 , 2N3171H , 2N3772J , TIP127 , 2SA1012D , 2SC5200H , 2SD1286-Z , 2SD1804L-T , 2SD2901 , 2ST501T , 3CD9A , 3CD9B .

History: DTS103 | 2N2154 | 2SA1024 | 2SA849 | 2SA1104 | BUH2M20P | 2SD2098

Keywords - 2NC5566 transistor datasheet

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