2NC5566 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2NC5566 Specs and Replacement

Type Designator: 2NC5566

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 230 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Collector Capacitance (Cc): 750 pF

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO-3PL

2NC5566 Substitution

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2NC5566 datasheet

..1. Size:200K inchange semiconductor

2nc5566.pdf pdf_icon

isc Silicon NPN Power Transistor 2NC5566 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applicatio... See More ⇒

Detailed specifications: UN511Z , FJP5027R , FJP5027O , ZDT690 , ZDT705 , ZDT758 , 2N3171H , 2N3772J , TIP42 , 2SA1012D , 2SC5200H , 2SD1286-Z , 2SD1804L-T , 2SD2901 , 2ST501T , 3CD9A , 3CD9B .