3CD9F Specs and Replacement
Type Designator: 3CD9F
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO-3
3CD9F Substitution
- BJT ⓘ Cross-Reference Search
3CD9F datasheet
isc Silicon PNP Power Transistors 3CD9F DESCRIPTION Low Collector Saturation Voltage- V = -1.5V(Max.)@ I = -7.5A CE(sat) C DC Current Gain- h =15-120@I = -7.5A, V =-5V FE C CE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications A... See More ⇒
Detailed specifications: 2SD1286-Z , 2SD1804L-T , 2SD2901 , 2ST501T , 3CD9A , 3CD9B , 3CD9C , 3CD9D , 2222A , 3CF20D , 3DA98 , 3DA98J , 3DD100A , 3DD100B , 3DD100C , 3DD100D , 3DD100E .
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