3CD9F Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CD9F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO-3
3CD9F Transistor Equivalent Substitute - Cross-Reference Search
3CD9F Datasheet (PDF)
..1. Size:203K inchange semiconductor
3cd9f.pdf
3cd9f.pdf
isc Silicon PNP Power Transistors 3CD9FDESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -7.5ACE(sat) CDC Current Gain-: h =15-120@I = -7.5A,V =-5VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsA
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
