3DD523 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD523
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO-3
3DD523 Transistor Equivalent Substitute - Cross-Reference Search
3DD523 Datasheet (PDF)
3dd523.pdf
isc Silicon NPN Power Transistor 3DD523DESCRIPTIONExcellent safe operating areaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15
3dd5287.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY R3DD5287 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 900 V BV CBO5 A I C0.5 V(max) V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
