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3DD523 Specs and Replacement


   Type Designator: 3DD523
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO-3

 3DD523 Transistor Equivalent Substitute - Cross-Reference Search

   

3DD523 detailed specifications

 ..1. Size:202K  inchange semiconductor
 3dd523.pdf pdf_icon

3DD523

isc Silicon NPN Power Transistor 3DD523 DESCRIPTION Excellent safe operating area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15... See More ⇒

 9.1. Size:172K  jilin sino
 3dd5287.pdf pdf_icon

3DD523

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Detailed specifications: 3DD167C , 3DD167D , 3DD167E , 3DD167F , 3DD200D , 3DD202A , 3DD202B , 3DD208 , C945 , 3DD880 , 3DD880X , 3DF1A , 3DF1B , 3DF1C , 3DF1D , 3DF1E , 3DF1F .

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