3DD523 Datasheet. Specs and Replacement

Type Designator: 3DD523  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO-3

 3DD523 Substitution

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3DD523 datasheet

 ..1. Size:202K  inchange semiconductor

 3dd523.pdf pdf_icon

3DD523

isc Silicon NPN Power Transistor 3DD523 DESCRIPTION Excellent safe operating area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15... See More ⇒

 9.1. Size:172K  jilin sino

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3DD523

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Detailed specifications: 3DD167C, 3DD167D, 3DD167E, 3DD167F, 3DD200D, 3DD202A, 3DD202B, 3DD208, C945, 3DD880, 3DD880X, 3DF1A, 3DF1B, 3DF1C, 3DF1D, 3DF1E, 3DF1F

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