3DD880 Datasheet. Specs and Replacement

Type Designator: 3DD880  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-220C

 3DD880 Substitution

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3DD880 datasheet

 ..1. Size:212K  inchange semiconductor

 3dd880.pdf pdf_icon

3DD880

isc Silicon NPN Power Transistors 3DD880 DESCRIPTION DC Current Gain -h = 60-300@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 0.1. Size:209K  inchange semiconductor

 3dd880x.pdf pdf_icon

3DD880

isc Silicon NPN Power Transistors 3DD880X DESCRIPTION X DC Current Gain -h = 55-75@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

Detailed specifications: 3DD167D, 3DD167E, 3DD167F, 3DD200D, 3DD202A, 3DD202B, 3DD208, 3DD523, C1815, 3DD880X, 3DF1A, 3DF1B, 3DF1C, 3DF1D, 3DF1E, 3DF1F, 3DF20A

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