3DD880 Todos los transistores

 

3DD880 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD880
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO-220C
 
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3DD880 Datasheet (PDF)

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3DD880

isc Silicon NPN Power Transistors 3DD880DESCRIPTIONDC Current Gain -h = 60-300@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 0.1. Size:209K  inchange semiconductor
3dd880x.pdf pdf_icon

3DD880

isc Silicon NPN Power Transistors 3DD880XDESCRIPTIONX: DC Current Gain -h = 55-75@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Otros transistores... 3DD167D , 3DD167E , 3DD167F , 3DD200D , 3DD202A , 3DD202B , 3DD208 , 3DD523 , 2N2222 , 3DD880X , 3DF1A , 3DF1B , 3DF1C , 3DF1D , 3DF1E , 3DF1F , 3DF20A .

 

 
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