3DD880 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD880
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO-220C
3DD880 Datasheet (PDF)
3dd880.pdf

isc Silicon NPN Power Transistors 3DD880DESCRIPTIONDC Current Gain -h = 60-300@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
3dd880x.pdf

isc Silicon NPN Power Transistors 3DD880XDESCRIPTIONX: DC Current Gain -h = 55-75@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Otros transistores... 3DD167D , 3DD167E , 3DD167F , 3DD200D , 3DD202A , 3DD202B , 3DD208 , 3DD523 , 2N2222 , 3DD880X , 3DF1A , 3DF1B , 3DF1C , 3DF1D , 3DF1E , 3DF1F , 3DF20A .



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