3DD880 Todos los transistores

 

3DD880 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD880
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO-220C
 

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3DD880 PDF detailed specifications

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3DD880

isc Silicon NPN Power Transistors 3DD880 DESCRIPTION DC Current Gain -h = 60-300@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

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3DD880

isc Silicon NPN Power Transistors 3DD880X DESCRIPTION X DC Current Gain -h = 55-75@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

Otros transistores... 3DD167D , 3DD167E , 3DD167F , 3DD200D , 3DD202A , 3DD202B , 3DD208 , 3DD523 , C1815 , 3DD880X , 3DF1A , 3DF1B , 3DF1C , 3DF1D , 3DF1E , 3DF1F , 3DF20A .

History: 3DK501D

 

 
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