3DD880 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DD880  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO-220C

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3DD880 datasheet

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 3dd880.pdf pdf_icon

3DD880

isc Silicon NPN Power Transistors 3DD880 DESCRIPTION DC Current Gain -h = 60-300@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

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 3dd880x.pdf pdf_icon

3DD880

isc Silicon NPN Power Transistors 3DD880X DESCRIPTION X DC Current Gain -h = 55-75@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

Otros transistores... 3DD167D, 3DD167E, 3DD167F, 3DD200D, 3DD202A, 3DD202B, 3DD208, 3DD523, C1815, 3DD880X, 3DF1A, 3DF1B, 3DF1C, 3DF1D, 3DF1E, 3DF1F, 3DF20A