3DF1E Datasheet. Specs and Replacement

Type Designator: 3DF1E  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO-66

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3DF1E datasheet

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3DF1E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DF1E DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE M... See More ⇒

Detailed specifications: 3DD208, 3DD523, 3DD880, 3DD880X, 3DF1A, 3DF1B, 3DF1C, 3DF1D, BC337, 3DF1F, 3DF20A, 3DF20B, 3DF20C, 3DF20D, 3DF20E, 3DF20F, 3DK104B

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