3DF1E Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DF1E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO-66
3DF1E Transistor Equivalent Substitute - Cross-Reference Search
3DF1E Datasheet (PDF)
..1. Size:185K inchange semiconductor
3df1e.pdf
3df1e.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
