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3DF1E Specs and Replacement


   Type Designator: 3DF1E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-66

 3DF1E Transistor Equivalent Substitute - Cross-Reference Search

   

3DF1E detailed specifications

 ..1. Size:185K  inchange semiconductor
 3df1e.pdf pdf_icon

3DF1E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DF1E DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE M... See More ⇒

Detailed specifications: 3DD208 , 3DD523 , 3DD880 , 3DD880X , 3DF1A , 3DF1B , 3DF1C , 3DF1D , BC337 , 3DF1F , 3DF20A , 3DF20B , 3DF20C , 3DF20D , 3DF20E , 3DF20F , 3DK104B .

History: TIPL752 | TIPL13005 | MUN5111DW | HSB772S

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