All Transistors. 3DF1E Datasheet

 

3DF1E Datasheet and Replacement


   Type Designator: 3DF1E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-66
 

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3DF1E Datasheet (PDF)

 ..1. Size:185K  inchange semiconductor
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3DF1E

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DF1EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE M

Datasheet: 3DD208 , 3DD523 , 3DD880 , 3DD880X , 3DF1A , 3DF1B , 3DF1C , 3DF1D , D882 , 3DF1F , 3DF20A , 3DF20B , 3DF20C , 3DF20D , 3DF20E , 3DF20F , 3DK104B .

History: MMBTRC102SS | CHT2222AGP-A | 2SD1751 | 2SC5824 | 2SC4159 | TP5001P3 | 3DD880X

Keywords - 3DF1E transistor datasheet

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