BU457 Datasheet. Specs and Replacement
Type Designator: BU457 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO-126
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BU457 Substitution
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BU457 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BF457/458/459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min)- BF457 CEO(BR) 250V(Min)- BF458 300V(Min)- BF459 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended for video output stages in colour and black And white TV receive... See More ⇒
Detailed specifications: 3DK104E, 3DK104F, A0718, BD912I, BFP420W, BU304F, BU305F, BU415, A1941, BU458, BU459, BUF405AF, BUL1203E, FJL6820, KT8232A, KT8232B, MJB32B
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