BU457 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU457
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO-126
BU457 Transistor Equivalent Substitute - Cross-Reference Search
BU457 Datasheet (PDF)
bu457 bu458 bu459.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BF457/458/459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)- BF457CEO(BR)250V(Min)- BF458300V(Min)- BF459Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for video output stages in colour and blackAnd white TV receive
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .