BDY96D Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY96D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BDY96D Transistor Equivalent Substitute - Cross-Reference Search
BDY96D Datasheet (PDF)
bdy96d.pdf
isc Silicon NPN Power Transistor BDY96DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.ABSOLUTE MAXIMUM RATINGS(T =25
bdy96.pdf
isc Silicon NPN Power Transistor BDY96DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.BSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
