BDY96D Specs and Replacement

Type Designator: BDY96D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 750 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 BDY96D Substitution

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BDY96D datasheet

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BDY96D

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BDY96D

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BDY96D

isc Silicon NPN Power Transistor BDY96 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching regulators applications. BSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

Detailed specifications: 2SD711, 2SD882U-P, 3CA168, 3DD102C, 3DD15B, 3DD15D, 3DD4515, BD134, 2SC828, BU2507AX, BU2507DX, BU2508AW, BU2508DW, BU2515AX, BU2520AW, BU2523AF, BU2523AX

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