2T837A Specs and Replacement

Type Designator: 2T837A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO-220

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2T837A datasheet

 ..1. Size:131K  1

 2t837a 2t837b 2t837v 2t837g 2t837d 2t837e.pdf pdf_icon

2T837A

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 ..2. Size:212K  inchange semiconductor

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2T837A

isc Silicon PNP Power Transistor 2T837A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-220 packaging Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -... See More ⇒

Detailed specifications: ST2001HI, SFT244, SFT245, MD1803DFH, 3DD4205D-O-M-N-C, 3DD4205D-O-Z-N-C, 2N3055B, 2SC3907S, BC546, 3CD3C, 3DA27C, 3DA608, 3DA98A, 3DA98B, 3DD164F, BFG540-X, BFP196W

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