All Transistors. 2T837A Datasheet

 

2T837A Datasheet and Replacement


   Type Designator: 2T837A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-220
 

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2T837A Datasheet (PDF)

 ..1. Size:131K  1
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2T837A

 ..2. Size:212K  inchange semiconductor
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2T837A

isc Silicon PNP Power Transistor 2T837ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-220 packagingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BUV23 | KN3906S | BU2520DW | 2N627 | SS8050D | 2SC402A | BUS21B

Keywords - 2T837A transistor datasheet

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