All Transistors. 2T837A Datasheet

 

2T837A Datasheet and Replacement


   Type Designator: 2T837A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-220
 

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2T837A Datasheet (PDF)

 ..1. Size:131K  1
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2T837A

 ..2. Size:212K  inchange semiconductor
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2T837A

isc Silicon PNP Power Transistor 2T837ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-220 packagingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

Datasheet: ST2001HI , SFT244 , SFT245 , MD1803DFH , 3DD4205D-O-M-N-C , 3DD4205D-O-Z-N-C , 2N3055B , 2SC3907S , 8050 , 3CD3C , 3DA27C , 3DA608 , 3DA98A , 3DA98B , 3DD164F , BFG540-X , BFP196W .

History: FMMT5857 | PMSTA56 | MPS3392 | 3DD303A | KSC3488 | 2SC3837K | KRA114M

Keywords - 2T837A transistor datasheet

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