All Transistors. DK151G Datasheet

 

DK151G Datasheet and Replacement


   Type Designator: DK151G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-3
 

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DK151G Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
 dk151g.pdf pdf_icon

DK151G

isc Silicon NPN Power Transistor DK151GDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS

 9.1. Size:24K  shaanxi
 dk151.pdf pdf_icon

DK151G

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK151NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching volta

Datasheet: 3DA98B , 3DD164F , BFG540-X , BFP196W , BFR182TW , BU506A , BU941ZL , BUV26G , TIP127 , DS15 , J6920 , KSA940TU , KSC2073TU , MJE15036 , MJE15037 , MJF13005 , QM5HG-24 .

History: 2SB1216S-H | TMPT4125 | PMD2001D | TMPT3798A

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