DK151G Specs and Replacement
Type Designator: DK151G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO-3
DK151G Substitution
DK151G detailed specifications
dk151g.pdf
isc Silicon NPN Power Transistor DK151G DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
dk151.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK151 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching volta... See More ⇒
Detailed specifications: 3DA98B , 3DD164F , BFG540-X , BFP196W , BFR182TW , BU506A , BU941ZL , BUV26G , TIP42 , DS15 , J6920 , KSA940TU , KSC2073TU , MJE15036 , MJE15037 , MJF13005 , QM5HG-24 .
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