DK151G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DK151G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO-3
Búsqueda de reemplazo de transistor bipolar DK151G
DK151G Datasheet (PDF)
dk151g.pdf
isc Silicon NPN Power Transistor DK151G DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications ABSOLUTE MAXIMUM RATINGS
dk151.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK151 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching volta
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History: SYL2246 | DTA143XM
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