2SA115 Datasheet and Replacement
Type Designator: 2SA115
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 34 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO44
2SA115 Substitution
2SA115 Datasheet (PDF)
2sa1150.pdf

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I
Datasheet: 2SA1142 , 2SA1143 , 2SA1144 , 2SA1145 , 2SA1145O , 2SA1145Y , 2SA1146 , 2SA1147 , 8550 , 2SA1150 , 2SA1150O , 2SA1150Y , 2SA1151 , 2SA1152 , 2SA1153 , 2SA1154 , 2SA1155 .
History: 2N1314 | BC817-25LT1
Keywords - 2SA115 transistor datasheet
2SA115 cross reference
2SA115 equivalent finder
2SA115 lookup
2SA115 substitution
2SA115 replacement
History: 2N1314 | BC817-25LT1



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