2SA115 Specs and Replacement
Type Designator: 2SA115
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 34 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO44
2SA115 Substitution
- BJT ⓘ Cross-Reference Search
2SA115 datasheet
2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC2710. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I... See More ⇒
Detailed specifications: 2SA1142, 2SA1143, 2SA1144, 2SA1145, 2SA1145O, 2SA1145Y, 2SA1146, 2SA1147, 2SC2655, 2SA1150, 2SA1150O, 2SA1150Y, 2SA1151, 2SA1152, 2SA1153, 2SA1154, 2SA1155
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