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TIP35AT Specs and Replacement


   Type Designator: TIP35AT
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-220
 

 TIP35AT Substitution

   - BJT ⓘ Cross-Reference Search

   

TIP35AT datasheet

 ..1. Size:213K  inchange semiconductor
tip35at.pdf pdf_icon

TIP35AT

isc Silicon NPN Power Transistor TIP35AT DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a ... See More ⇒

 8.1. Size:157K  motorola
tip35are.pdf pdf_icon

TIP35AT

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching applications. TIP35C* 25 A Collector Current PNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw... See More ⇒

 8.2. Size:260K  onsemi
tip35a tip35b tip35c tip36a tip36b tip36c.pdf pdf_icon

TIP35AT

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain ... See More ⇒

 8.3. Size:222K  inchange semiconductor
tip35af.pdf pdf_icon

TIP35AT

isc Silicon NPN Power Transistor TIP35AF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a ... See More ⇒

Detailed specifications: KSC2073TU , MJE15036 , MJE15037 , MJF13005 , QM5HG-24 , S2530A , TIP127B , TIP35AB , 2SC5198 , TIP36AB , TIP36AT , UM8168L , SS8550-L , SS8550-H , SS8550-J , 2T837B , 2T837V .

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