All Transistors. TIP35AT Datasheet

 

TIP35AT Datasheet and Replacement


   Type Designator: TIP35AT
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-220
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TIP35AT Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
tip35at.pdf pdf_icon

TIP35AT

isc Silicon NPN Power Transistor TIP35ATDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

 8.1. Size:157K  motorola
tip35are.pdf pdf_icon

TIP35AT

Order this documentMOTOROLAby TIP35A/DSEMICONDUCTOR TECHNICAL DATANPNTIP35AComplementary SiliconTIP35B*High-Power Transistors. . . for generalpurpose power amplifier and switching applications.TIP35C* 25 A Collector CurrentPNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 VTIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw

 8.2. Size:260K  onsemi
tip35a tip35b tip35c tip36a tip36b tip36c.pdf pdf_icon

TIP35AT

TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

 8.3. Size:222K  inchange semiconductor
tip35af.pdf pdf_icon

TIP35AT

isc Silicon NPN Power Transistor TIP35AFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD667L-B | TIP35BF | 3DA608B | TIP36CT4TL | 2N4249 | 2N2225 | 3DA608C

Keywords - TIP35AT transistor datasheet

 TIP35AT cross reference
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