TIP35AT Todos los transistores

 

TIP35AT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIP35AT
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de TIP35AT

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Principales características: TIP35AT

 ..1. Size:213K  inchange semiconductor
 tip35at.pdf pdf_icon

TIP35AT

isc Silicon NPN Power Transistor TIP35AT DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 8.1. Size:157K  motorola
 tip35are.pdf pdf_icon

TIP35AT

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching applications. TIP35C* 25 A Collector Current PNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw

 8.2. Size:260K  onsemi
 tip35a tip35b tip35c tip36a tip36b tip36c.pdf pdf_icon

TIP35AT

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

 8.3. Size:222K  inchange semiconductor
 tip35af.pdf pdf_icon

TIP35AT

isc Silicon NPN Power Transistor TIP35AF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

MOSTRAR MÁS

Otros transistores... KSC2073TU , MJE15036 , MJE15037 , MJF13005 , QM5HG-24 , S2530A , TIP127B , TIP35AB , 2SC5198 , TIP36AB , TIP36AT , UM8168L , SS8550-L , SS8550-H , SS8550-J , 2T837B , 2T837V .

 

 
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