TIP35AT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP35AT
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 25 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Empaquetado / Estuche: TO-220
Búsqueda de reemplazo de transistor bipolar TIP35AT
TIP35AT Datasheet (PDF)
1.1. tip35at.pdf 
Size:213K _inchange_semiconductor
isc Silicon NPN Power Transistor TIP35AT DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
4.1. tip35are.pdf Size:157K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y T I P 3 5 A / D S E M I C O N D U C T O R T E C H N I C A L D A T A N P N T I P 3 5 A C o m p l e m e n t a r y S i l i c o n T I P 3 5 B * H i g h - P o w e r T r a n s i s t o r s . . . f o r g e n e r a l p u r p o s e p o w e r a m p l i f i e r a n d s w i t c h i n g
4.2. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125
4.3. tip35 tip35a tip35b tip35c.pdf Size:160K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION ·With TO-3PN package ·Complement to type TIP36/36A/36B/36C ·DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
4.4. tip35af.pdf Size:222K _inchange_semiconductor
isc Silicon NPN Power Transistor TIP35AF DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
4.5. tip35ab.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Power Transistor TIP35AB DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
