TIP36AB Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP36AB
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO-263
TIP36AB Transistor Equivalent Substitute - Cross-Reference Search
TIP36AB Datasheet (PDF)
0.1. tip36ab.pdf 
Size:215K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP36AB DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
8.1. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125
8.2. tip36 tip36a tip36b tip36c.pdf Size:141K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION ·With TO-3PN package ·Complement to type TIP35/35A/35B/35C ·DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
8.3. tip36a.pdf Size:221K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP36A DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Complement to Type TIP35A ·Current Gain-Bandwidth Product- : f = 3.0MHz(Min)@I = -1.0A T C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in gen
8.4. tip36af.pdf Size:225K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP36AF DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
8.5. tip36at.pdf Size:216K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP36AT DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
