TIP36AB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP36AB  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO-263

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TIP36AB datasheet

 ..1. Size:215K  inchange semiconductor
 tip36ab.pdf pdf_icon

TIP36AB

isc Silicon PNP Power Transistor TIP36AB DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 8.1. Size:260K  onsemi
 tip35a tip35b tip35c tip36a tip36b tip36c.pdf pdf_icon

TIP36AB

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

 8.2. Size:141K  inchange semiconductor
 tip36 tip36a tip36b tip36c.pdf pdf_icon

TIP36AB

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

 8.3. Size:225K  inchange semiconductor
 tip36af.pdf pdf_icon

TIP36AB

isc Silicon PNP Power Transistor TIP36AF DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

MOSTRAR MÁS

Otros transistores... MJE15036, MJE15037, MJF13005, QM5HG-24, S2530A, TIP127B, TIP35AB, TIP35AT, BD778, TIP36AT, UM8168L, SS8550-L, SS8550-H, SS8550-J, 2T837B, 2T837V, 2T837G