UM8168L Specs and Replacement
Type Designator: UM8168L
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 330 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 22
Noise Figure, dB: -
Package: TO-3PN
UM8168L Substitution
UM8168L datasheet
um8168l.pdf
isc Silicon NPN Power Transistor UM8168L DESCRIPTION High Voltage V = 330V(Min) CBO Fast Switching Speed- t = 750ns(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIM... See More ⇒
Detailed specifications: MJF13005 , QM5HG-24 , S2530A , TIP127B , TIP35AB , TIP35AT , TIP36AB , TIP36AT , 2SD669A , SS8550-L , SS8550-H , SS8550-J , 2T837B , 2T837V , 2T837G , 2T837D , 2T837E .
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