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2T837V Specs and Replacement


   Type Designator: 2T837V
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-220
 

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2T837V datasheet

 ..1. Size:131K  1
 2t837a 2t837b 2t837v 2t837g 2t837d 2t837e.pdf pdf_icon

2T837V

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 9.1. Size:212K  inchange semiconductor
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2T837V

isc Silicon PNP Power Transistor 2T837A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-220 packaging Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -... See More ⇒

Detailed specifications: TIP35AT , TIP36AB , TIP36AT , UM8168L , SS8550-L , SS8550-H , SS8550-J , 2T837B , BC556 , 2T837G , 2T837D , 2T837E , 9014M-B , 9014M-C , 9014M-D , 9015M-B , 9015M-C .

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