All Transistors. 2T837D Datasheet

 

2T837D Datasheet and Replacement


   Type Designator: 2T837D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO-220
 

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2T837D Datasheet (PDF)

 ..1. Size:131K  1
 2t837a 2t837b 2t837v 2t837g 2t837d 2t837e.pdf pdf_icon

2T837D

 9.1. Size:212K  inchange semiconductor
 2t837a.pdf pdf_icon

2T837D

isc Silicon PNP Power Transistor 2T837ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-220 packagingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

Datasheet: TIP36AT , UM8168L , SS8550-L , SS8550-H , SS8550-J , 2T837B , 2T837V , 2T837G , BC549 , 2T837E , 9014M-B , 9014M-C , 9014M-D , 9015M-B , 9015M-C , 9015M-D , HLD128D .

History: BFY30 | 2SD1106 | 2SC1716 | BSP42 | 3DD8E | RCP707B | KRC661F

Keywords - 2T837D transistor datasheet

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