2T837D Datasheet, Equivalent, Cross Reference Search
Type Designator: 2T837D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO-220
2T837D Transistor Equivalent Substitute - Cross-Reference Search
2T837D Datasheet (PDF)
0.1. 2t837a 2t837b 2t837v 2t837g 2t837d 2t837e.pdf 
Size:131K _1
9.1. 2t837a.pdf Size:212K _inchange_semiconductor
isc Silicon PNP Power Transistor 2T837A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = -80V(Min) (BR)CEO ·With TO-220 packaging ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
