2T837D Specs and Replacement
Type Designator: 2T837D
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO-220
2T837D Substitution
- BJT ⓘ Cross-Reference Search
2T837D datasheet
isc Silicon PNP Power Transistor 2T837A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-220 packaging Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -... See More ⇒
Detailed specifications: TIP36AT , UM8168L , SS8550-L , SS8550-H , SS8550-J , 2T837B , 2T837V , 2T837G , 2SD669 , 2T837E , 9014M-B , 9014M-C , 9014M-D , 9015M-B , 9015M-C , 9015M-D , HLD128D .
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