All Transistors. 2T837E Datasheet

 

2T837E Datasheet, Equivalent, Cross Reference Search

Type Designator: 2T837E

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 125 °C

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-220

2T837E Transistor Equivalent Substitute - Cross-Reference Search

 

2T837E Datasheet (PDF)

0.1. 2t837a 2t837b 2t837v 2t837g 2t837d 2t837e.pdf Size:131K _1

2T837E
2T837E

9.1. 2t837a.pdf Size:212K _inchange_semiconductor

2T837E
2T837E

isc Silicon PNP Power Transistor 2T837ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-220 packagingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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