Q3-2 Datasheet, Equivalent, Cross Reference Search
Type Designator: Q3-2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220C
Q3-2 Transistor Equivalent Substitute - Cross-Reference Search
Q3-2 Datasheet (PDF)
q3-2.pdf
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isc Silicon NPN Power Transistor Q3-2DESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
![Q3-2](https://alltransistors.com/images/us.png)
![Q3-2](https://alltransistors.com/images/es.png)
![Q3-2](https://alltransistors.com/images/ru.png)
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