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Q3-2 Specs and Replacement


   Type Designator: Q3-2
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220C
 

 Q3-2 Substitution

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Q3-2 detailed specifications

 ..1. Size:189K  inchange semiconductor
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Q3-2

isc Silicon NPN Power Transistor Q3-2 DESCRIPTION High Voltage V = 400V(Min) CEV Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

Detailed specifications: 9015M-C , 9015M-D , HLD128D , LM4158D , ST2310HI , ST2310DHI , 3DD13005MD-O-HF-N-B , 3DD13005MD-O-Z-N-C , B647 , YZ21D , 3DD1555 , 3DD13007K , BRMJE172D , 3DD401 , XW6821 , XW6822 , XW6822A .

Keywords - Q3-2 transistor specs

 Q3-2 cross reference
 Q3-2 equivalent finder
 Q3-2 lookup
 Q3-2 substitution
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