All Transistors. CD551B Datasheet

 

CD551B Datasheet, Equivalent, Cross Reference Search


   Type Designator: CD551B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.8 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO220

 CD551B Transistor Equivalent Substitute - Cross-Reference Search

   

CD551B Datasheet (PDF)

 ..1. Size:224K  inchange semiconductor
 cd551b.pdf

CD551B CD551B

isc Silicon PNP Power Transistor CD551BDESCRIPTIONMinimum Lot-to-Lot variations for robust device performanceand reliable operationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -35 VCBOV Collector-Emitter Voltage -35 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -3 ACCollector Power DissipationP 1.8 WC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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