CD551B Specs and Replacement
Type Designator: CD551B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.8 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO220
CD551B Substitution
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CD551B datasheet
isc Silicon PNP Power Transistor CD551B DESCRIPTION Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -35 V CBO V Collector-Emitter Voltage -35 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -3 A C Collector Power Dissipation P 1.8 W C ... See More ⇒
Detailed specifications: YTS4125 , YTS4126 , YTS4402 , YTS4403 , YTS2906 , YTS2907 , YTS2906A , YTS2907A , S8550 , 3DD5E , TMPC1009F1 , TMPC1009F2 , TMPC1009F3 , TMPC1009F4 , TMPC1009F5 , TMPC1622D6 , TMPC1622D7 .
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