3DD5E Specs and Replacement
Type Designator: 3DD5E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
3DD5E Substitution
- BJT ⓘ Cross-Reference Search
3DD5E datasheet
isc Silicon NPN Power Transistor 3DD5E DESCRIPTION Excellent safe operating area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 350... See More ⇒
Detailed specifications: YTS4126 , YTS4402 , YTS4403 , YTS2906 , YTS2907 , YTS2906A , YTS2907A , CD551B , 2SC4793 , TMPC1009F1 , TMPC1009F2 , TMPC1009F3 , TMPC1009F4 , TMPC1009F5 , TMPC1622D6 , TMPC1622D7 , TMPC1622D8 .
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