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3DD5E Specs and Replacement


   Type Designator: 3DD5E
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

 3DD5E Substitution

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3DD5E datasheet

 ..1. Size:234K  inchange semiconductor
 3dd5e.pdf pdf_icon

3DD5E

isc Silicon NPN Power Transistor 3DD5E DESCRIPTION Excellent safe operating area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 350... See More ⇒

Detailed specifications: YTS4126 , YTS4402 , YTS4403 , YTS2906 , YTS2907 , YTS2906A , YTS2907A , CD551B , 2SC4793 , TMPC1009F1 , TMPC1009F2 , TMPC1009F3 , TMPC1009F4 , TMPC1009F5 , TMPC1622D6 , TMPC1622D7 , TMPC1622D8 .

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