2SA1155 Specs and Replacement
Type Designator: 2SA1155
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 600
Package: SP9
2SA1155 Substitution
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2SA1155 datasheet
2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC2710. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I... See More ⇒
Detailed specifications: 2SA115, 2SA1150, 2SA1150O, 2SA1150Y, 2SA1151, 2SA1152, 2SA1153, 2SA1154, D965, 2SA1156, 2SA1158, 2SA116, 2SA1160, 2SA1160A, 2SA1160B, 2SA1160C, 2SA1161
Keywords - 2SA1155 pdf specs
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History: 2SA1150Y | 2SA1158
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