All Transistors. 2SA1155 Datasheet

 

2SA1155 Datasheet and Replacement


   Type Designator: 2SA1155
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 600
   Noise Figure, dB: -
   Package: SP9
 

 2SA1155 Substitution

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2SA1155 Datasheet (PDF)

 8.1. Size:193K  toshiba
 2sa1150.pdf pdf_icon

2SA1155

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I

 8.2. Size:166K  nec
 2sa1156.pdf pdf_icon

2SA1155

 8.3. Size:24K  nec
 2sa1153.pdf pdf_icon

2SA1155

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Datasheet: 2SA115 , 2SA1150 , 2SA1150O , 2SA1150Y , 2SA1151 , 2SA1152 , 2SA1153 , 2SA1154 , NJW0281G , 2SA1156 , 2SA1158 , 2SA116 , 2SA1160 , 2SA1160A , 2SA1160B , 2SA1160C , 2SA1161 .

History: 2N1278 | 2N2453 | 2S59 | 2N2461 | 2SD1802 | 2N1300 | 2N2363

Keywords - 2SA1155 transistor datasheet

 2SA1155 cross reference
 2SA1155 equivalent finder
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