2SA1158 PDF and Equivalents Search

 

2SA1158 Specs and Replacement

Type Designator: 2SA1158

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

 2SA1158 Substitution

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2SA1158 datasheet

 8.1. Size:193K  toshiba

 2sa1150.pdf pdf_icon

2SA1158

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC2710. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I... See More ⇒

 8.2. Size:166K  nec

 2sa1156.pdf pdf_icon

2SA1158

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 8.3. Size:24K  nec

 2sa1153.pdf pdf_icon

2SA1158

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Detailed specifications: 2SA1150O, 2SA1150Y, 2SA1151, 2SA1152, 2SA1153, 2SA1154, 2SA1155, 2SA1156, TIP2955, 2SA116, 2SA1160, 2SA1160A, 2SA1160B, 2SA1160C, 2SA1161, 2SA1162, 2SA1163

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