All Transistors. 2SA1158 Datasheet

 

2SA1158 Datasheet and Replacement


   Type Designator: 2SA1158
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
 

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2SA1158 Datasheet (PDF)

 8.1. Size:193K  toshiba
 2sa1150.pdf pdf_icon

2SA1158

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I

 8.2. Size:166K  nec
 2sa1156.pdf pdf_icon

2SA1158

 8.3. Size:24K  nec
 2sa1153.pdf pdf_icon

2SA1158

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Datasheet: 2SA1150O , 2SA1150Y , 2SA1151 , 2SA1152 , 2SA1153 , 2SA1154 , 2SA1155 , 2SA1156 , 2SD669 , 2SA116 , 2SA1160 , 2SA1160A , 2SA1160B , 2SA1160C , 2SA1161 , 2SA1162 , 2SA1163 .

History: 2N3250

Keywords - 2SA1158 transistor datasheet

 2SA1158 cross reference
 2SA1158 equivalent finder
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