3CD010G PDF and Equivalents Search

 

3CD010G Specs and Replacement

Type Designator: 3CD010G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO66

 3CD010G Substitution

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3CD010G datasheet

 ..1. Size:208K  inchange semiconductor

 3cd010g.pdf pdf_icon

3CD010G

isc Silicon PNP Power Transistor 3CD010G DESCRIPTION DC Current Gain h = 15@I = -0.75A FE C Collector-Emitter Sustaining Voltage V = -200V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYM... See More ⇒

 8.1. Size:145K  china

 3cd010.pdf pdf_icon

3CD010G

3CD010 PNP B C D E F G H PCM TA=75 10 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=1mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=0.5m 4.0 V ICBO VCBA ... See More ⇒

Detailed specifications: TMPTA56 , TMPTA63 , TMPTA64 , TMPTA70 , TMPTA92 , TMPTA93 , TMPTH81 , 2SD1047-247 , BD140 , 3DD6E , ISCN341N , ISCP233N , KSE340J , KSE350J , KSH13005 , 2SC3866A , 3DK501D .

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