3CD010G Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CD010G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO66
3CD010G Transistor Equivalent Substitute - Cross-Reference Search
3CD010G Datasheet (PDF)
0.1. 3cd010g.pdf 
Size:208K _inchange_semiconductor
isc Silicon PNP Power Transistor 3CD010GDESCRIPTIONDC Current Gain: h = 15@I = -0.75AFE CCollector-Emitter Sustaining Voltage: V = -200V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYM
8.1. 3cd010.pdf Size:145K _china
3CD010 PNP B C D E F G H PCM TA=75 10 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=1mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=0.5m 4.0 V ICBO VCBA
Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .
